FIELD: electricity.
SUBSTANCE: in silicone diode with Schottky barrier junction made as a mesa structure the peripheral part of barrier contact is protected with a layer of silicone oxide and height of the mesa structure exceeds thickness of epitaxial working layer of silicone with n- conductivity, at that the protective dielectric coating, which thickness exceeds height of the mesa structure is made of aluminasilicate glass and placed at lateral side of the mesa structure and at surface of silicone substrate with n+ conductivity.
EFFECT: designing and manufacturing of silicone diode with Schottky barrier junction, which allows manufacturing a diode with reduced value of leak current and high value of reverse voltage at high values of ambient temperature with simultaneous improvement in quality of the protective dielectric coating of the diode mesa structure.
2 cl, 6 dwg
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