POWERFUL MICROWAVE LDMOS TRANSISTOR AND METHOD OF ITS MANUFACTURING Russian patent published in 2013 - IPC H01L29/78 H01L21/336 

FIELD: electricity.

SUBSTANCE: in a powerful microwave LDMOS transistor comprising a silicon substrate with high-resistance and high-alloyed layers of p-type conductivity, elementary transistor cells with a source p⁺- link, a p-pocket, high-alloyed source, high-alloyed and low-alloyed drain areas of n-type conductivity in a high-resistance p^--layer of the substrate, a gate dielectric and electrodes of a gate of transistor cells based on polysilicon in the form of narrow longitudinal teeth of rectangular section with a row of branched contact sites adjacent to it at the side of the source above p-pockets of elementary cells, metal electrodes of the drain, source and bus, shunting gate teeth of transistor cells via adjacent branched contact sites on the face side of the substrate and the common metal electrode of the transistor structure source on its rear side, under the gate dielectric of branched contact sites of gate electrodes of transistor cells there are additional n⁺-areas arranged, which are higher alloyed compared to p-pockets, and branched contact sites are made in the form of two adjacent rectangular sites, one of which directly adjoins the gate teeth with the side length making 0.8…1.0 of the width of contact teeth of elementary cells, and via the second contact site with side length of larger size, gate teeth are shunted by metal bars.

EFFECT: development of a transistor with improved frequency and energy parameters, with increased profitability of industrial production.

3 cl, 2 dwg