FIELD: optoelectronic devices.
SUBSTANCE: proposed detector that can be used as infrared detector for thermal imagers, heat direction finders, orienting and environment monitoring devices has planar-structure multilayer sensing elements wherein heat-sensing layer is made of material in the form of mixture of vanadium oxides Vox at 2 < x < 2.5 that does not undergo phase transition.
EFFECT: improved threshold sensitivity, enlarged dynamic and operating temperature range.
1 cl, 3 dwg
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