METHOD FOR PRODUCING SINGLE CRYSTAL SIC Russian patent published in 2021 - IPC C30B23/00 C30B29/36 C30B35/00 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and relates to a technology for producing single crystals of SiC - a widespread material used in the manufacture of integrated circuits, in particular, by the method of high-temperature physical gas transport. The method for producing single-crystal SiC consists in the fact that a growth crucible 4 with a source 16 of silicon carbide powder and a plate 8 of a silicon carbide seed single crystal SiC is placed in the growth chamber 1, equipped with a heat-insulating screen 2 with a pyrometric hole 3, in the growth crucible 4 fields of operating temperatures with an axial gradient in the direction from the plate 8 of the seed single crystal to the source 16, the source 16 is evaporated, followed by the crystallization of silicon carbide 21 on the surface of the plate 8 of the seed single crystal due to the heating of the growth chamber 1 by the heater and the cooling of the plate 8 of the seed single crystal through the pyrometric hole 3, while in the process of growth an additional heat-insulating screen 19 is used, formed by winding the sheets refractory material on the outer side wall of the growth crucible 4, also provides a controlled outflow of silicon-containing volatile compounds formed during the evaporation of the source 16 from the growth crucible 4 in an amount from 20 to 50% of the weight of the grown ingot 21 in terms of silicon carbide through the holes 12 and gaps 15 located at the edge of the crystallization front, or through the aforementioned holes and a groove made at the level of the edge of the plate 8 of the seed single crystal by changing the total cross-section of the holes 12 and/or the gap 15 and/or the width of the groove.

EFFECT: invention improves the quality of the obtained single-crystal SiC ingots and increases their yield.

1 cl, 3 dwg, 5 ex