BIPOLAR-FIELD BUFFER AMPLIFIER Russian patent published in 2019 - IPC H03F3/45 H03F3/185 

FIELD: radio equipment.

SUBSTANCE: invention relates to the field of radio engineering and communications and can be used as an output stage for amplifying fast-changing analog signals in power (buffer amplifier – BA), in the structure of analog microcircuits for various functional purposes, for example, operational amplifiers. BA contains first 1 field-effect transistor, second 3 field-effect transistor, output bipolar transistor 5, first 8 current-stabilizing two-terminal, additional current mirror 9, consistent with first 4 bus power supply, and the output of current mirror 9 is connected to the base of transistor 5 and is connected to the gate of second 3 field-effect transistor. Presence of a common negative feedback with respect to output 6 ensures high linearity of the amplitude pass characteristic.

EFFECT: increase in the maximum slew rate of the output voltage and a decrease in the transient establishment time in the BA with large pulsed input signals (measured with the supply voltage).

1 cl, 4 dwg