METHOD TO MANUFACTURE LAMINATE NANOSTRUCTURE FOR DOUBLE-PLATE CAPACITORS Russian patent published in 2012 - IPC H01G4/33 B82B1/00 

FIELD: electricity.

SUBSTANCE: in the method includes the following stages: generation of regularly arranged inoculating ledges on the surface of a silicon substrate, growing one-dimensional nanoelements, and also application of layers by the method of atomic-layer deposition (ALD) or plasma enchanched ALD (PEALD) onto surfaces of grown one-dimensional nanoelements and onto sections of the substrate surface, which are not occupied with the above nanoelements, and the applied layers are conformal to these surfaces and correspond to the dielectric part of the formed nanostructure and the upper plate of the capacitor, according to the invention, centres of one-dimensional nanoelements are formed on the surface of the silicon substrate in the form of regularly arranged inoculating ledges, on which one-dimensional nanoelements are grown by the method of gliding angular deposition (GLAD) from high-alloyed silicon of columnar shape, at the same time inoculating ledges are made with maximum transverse dimensions from 25 to 80 nm.

EFFECT: higher specific electric and energy intensity, homogeneity of electrophysical parameters distribution.

4 cl, 5 dwg