FIELD: microelectronics, audio and video appliances. SUBSTANCE: capacitor is made of monocrystalline doped silicon substrate provided with many holes 4, insulating layer 4, and conducting layer 5 functioning as antielectrode; all these parts of substrate are obtained by etching in fluoride-containing acid electrolyte which connects substrate as anode. EFFECT: improved resistivity of capacitor. 20 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR FORMING BULK SILICON ELEMENTS FOR MICROSYSTEM TECHNOLOGY DEVICES AND A PRODUCTION LINE FOR IMPLEMENTING THE METHOD | 2022 |
|
RU2794560C1 |
| SEMICONDUCTOR DEVICE | 1996 |
|
RU2139599C1 |
| METHOD OF MAKING PHOTOELECTRIC ELEMENT BASED ON GERMANIUM | 2008 |
|
RU2377698C1 |
| SLIGHTLY SHADED SOLAR CELL AND ITS MANUFACTURING PROCESS | 1997 |
|
RU2185688C2 |
| ENERGY STORAGE DEVICE WITH AT LEAST ONE POROUS POLYCRYSTALLINE SUBSTRATE | 2013 |
|
RU2577249C2 |
| ELECTRODE FOR USE IN ELECTROCHEMICAL CAPACITOR WITH DOUBLE ELECTRIC LAYER (VERSIONS) | 2007 |
|
RU2483383C2 |
| NONVOLATILE MEMORY LOCATION | 1997 |
|
RU2205471C2 |
| MEMORY DEVICE AND ITS MANUFACTURING PROCESS | 2001 |
|
RU2247441C2 |
| PROCESS OF MANUFACTURE OF SEMICONDUCTOR COMPONENTS OF SHF HIGH-POWER TRANSISTOR MICROASSEMBLIES | 1991 |
|
RU2017271C1 |
| SUPERCAPACITOR BASED ON CMOS TECHNOLOGY | 2016 |
|
RU2629364C1 |
Authors
Dates
1997-06-20—Published
1992-07-23—Filed