CIRCUIT STRUCTURE WITH AT LEAST ONE CAPACITOR AND ITS MANUFACTURING PROCESS Russian patent published in 1997 - IPC

Abstract RU 2082258 C1

FIELD: microelectronics, audio and video appliances. SUBSTANCE: capacitor is made of monocrystalline doped silicon substrate provided with many holes 4, insulating layer 4, and conducting layer 5 functioning as antielectrode; all these parts of substrate are obtained by etching in fluoride-containing acid electrolyte which connects substrate as anode. EFFECT: improved resistivity of capacitor. 20 cl, 3 dwg

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RU 2 082 258 C1

Authors

Fol'Ker Lemann[De]

Mikhael' Boj[De]

Vol'Fgang Khenljajn[De]

Dates

1997-06-20Published

1992-07-23Filed