PHOTOCATHODE NODE OF VACUUM PHOTOELECTRONIC DEVICE WITH SEMI-TRANSPARENT PHOTOCATHODE BASED ON NITRIDE GALLIUM COMPOUNDS Russian patent published in 2017 - IPC H01J31/50 

FIELD: physics.

SUBSTANCE: invention relates to photocathode nodes of vacuum photoelectronic devices operating in the ultraviolet region of the spectrum and containing a photocathode based on nitride gallium compounds and can be used in the construction of direct-transfer electron-optical converters, photoelectronic multipliers and coordinate-sensitive detectors with microchannel amplification, produced by the method of separate processing the photocathode and the housing parts. In the photocathode node of a vacuum photoelectric device with a semi-transparent photocathode, made in the form of a disk of sapphire, layers of the heteroepitaxial structure of nitride gallium compounds are grown on the inner surface of the entrance window, as a semi-transparent photocathode. On the outer surface of the entrance window, along its periphery, the joint element of the inlet window with the body of the vacuum photoelectric device made of bimetal is vacuum-tightly fixed. The bimetal layer that does not touch the outer surface of the entrance window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by not more than 10% in the temperature range of 20°C to 200°C.

EFFECT: expanding the application field of the photocathode node of a vacuum photoelectric device with a semi-transparent photocathode, increasing the quantum yield level of the semi-transparent photocathode of the photocathode node of a vacuum photoelectric device.

6 cl, 2 dwg