FIELD: optoelectronics.
SUBSTANCE: vacuum emission optoelectronics used as photocathodes for single-channel dual-spectral electron-image amplifiers (EIA). In the photocathode, between the substrate and the diamond layer, high-purity layers of silicon and germanium are located sequentially, made in the form of grids with coaxially located holes, while the holes in the germanium layer are partially or completely filled with the substance of the diamond layer, and the substrate is made of sapphire or silicon in which the through centrally symmetrical hole is made.
EFFECT: ensuring coordinate reference of images of UV objects to the image of the surrounding area.
1 cl, 9 dwg
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Authors
Dates
2023-12-13—Published
2023-09-04—Filed