PHOTOCATHODE Russian patent published in 2015 - IPC H01J1/35 B82B1/00 

FIELD: physics.

SUBSTANCE: disclosed is a photocathode made from a high-purity semiconductor, wherein an optical radiation detecting semiconductor layer is situated on an optical radiation-transparent substrate, the thickness (d) thereof is linked to the radiation absorption coefficient (α) by the relationship d≈(2-5)·α-1, an ohmic contact is made on the periphery of the layer, and on the front surface of the high-purity semiconductor there is a dielectric layer with a nanometre thickness and a receiving electrode, separated from the dielectric layer by a vacuum gap and made in the form of films of conducting material which is semi-transparent for optical radiation and a phosphor, consecutively deposited on the light-transparent substrate.

EFFECT: wider spectral sensitivity range of photocathodes with high homogeneity of spatial characteristics thereof and considerable simplification of the technology of manufacture compared to membrane and point structures.

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