FIELD: physics.
SUBSTANCE: invention relates to production of vacuum photoelectronic devices and more specifically to the design of a photocathode assembly particularly for photoelectronic devices and electro-optical converters. The photocathode assembly of a vacuum photoelectronic device with a semitransparent photocathode comprises an input window made of sapphire with a heteroepitaxial structure of compounds of the type A3B5, grown on a monocrystalline substrate, a flange made of active metal, mounted on the periphery of the input window, which is made in form of a flat disc of sapphire. The heteroexpitaxial structure can be made in form of a GaN/GaAlN structure grown on said flat disc of sapphire, having a thickness of 0.5-0.7 mm. The active metal used can be titanium. The method of producing a photocathode assembly of a vacuum photoelectronic device with a semitransparent photocathode includes making a heteroepitaxial structure on a monocrystalline substrate and mounting said structure on an input window, the input window used being a flat disc of sapphire; fixing, active and buffer layers of a heteroepitaxial structure are successively grown epitaxially on the monocrystalline substrate; the heteroepitaxial structure is welded onto the sapphire material of the input window; the substrate and the fixing layer are selectively etched, after which a flange of active metal is welded onto the periphery of the input window.
EFFECT: high sensitivity, heat conductivity of the photocathode assembly and contrast of the transmitted image, simple design and high reliability thereof.
7 cl, 4 dwg
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Authors
Dates
2014-08-10—Published
2012-12-27—Filed