METHOD OF MANUFACTURING DIODE WITH TERAHERTZ RANGE WHISKER Russian patent published in 2017 - IPC H01L21/329 

FIELD: electricity.

SUBSTANCE: method of manufacturing of diode with mesa-substrate whisker of terahertz range includes application of dielectric film on surface of heteroepitaxial structure, in which in the mask of photoresist by etching up to the high-alloyed cathode layer there is a port of cathode contact U-, or O-shaped form, formation of low-resistance ohmic cathode contact in it with subsequent removal of the resist, annealing and galvanic thickening, formation with the use of thin resistive masks on surfaces of active layers of anode contact port of micron or submicronic diameter between U-projections of cathode, or in the center of O-shaped cathode, removal of dielectric layer in the port of anode contact, conducting of finishing treatments, formation of metallisation of anode contact, removal of the resist, formation of resistive mask or mask of dielectric for etching of mesa around the pad with anode and cathode located thereon, etching of mesa at least to semi-insulating layer of substrate, forming anode and cathode contact pads on a semi-insulating layer at the bottom of mesa, connecting the anode to its contact pad by metal air bridge, which junction with the anode is an expanded contact, which filed projections are supported by dielectric layer, connection of cathode to its contact pad is made either by metal air bridge, or metal bus lying on mesa side surface or on the dielectric layer, thinning of the substrate and separation into separate crystals. According to the method prior mesa etching and forming the air bridges on the anode contact of micron or submicronic dimensions a metal whisker is formed which is an inverted truncated metal cone, or a truncated metal pyramid with a section connected to the anode contact, and a wide base connected to end of air bridge overhanging over the anode, which other end is connected to the contact pad located on the semi-insulating layer and forming stiffening ribs on the outer side of the air bridge, wherein formation of the air bridge to anode and thickening of cathode is carried out at different process stages.

EFFECT: simplified manufacture of the diode with the whisker.

2 dwg