METHOD OF PRODUCING VERTICALLY EMITTING LASER WITH INTRACAVITY CONTACTS AND DIELECTRIC MIRROR Russian patent published in 2019 - IPC H01S5/183 H01L21/18 B82Y20/00 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor engineering. Method of producing a vertically emitting laser with intracavity contacts and a dielectric mirror includes successive epitaxial growth of a semiconductor heterostructure on a semi-insulating GaAs substrate, comprising a lower undoped distributed Bragg reflector (DBR), an intracavity contact layer of n-type, optical resonator with an active region and an aperture layer of Al_xGa_1-xAs p-type, where 0.97 ≤ x < 1, a p-type intracavity contact layer, forming a p-type electrical contact; formation of oxide current aperture in aperture layer, formation of n-type electric contact and formation of upper dielectric DBR, formation of passivating and planarizing layer with low dielectric permeability and formation of metallization of contact p- and n-type pads. On intra-cavity contact layer of p-type is successively grown a stop-layer of Al_yGa_1-yAs p-type, where 0.85 ≤ y ≤ 0.95, and heavily doped contact layer of p-type GaAs, p-type electrical contact is formed on high-alloy p-type contact layer, removed by chemical etching through mask high-power p-type contact layer and a p-type stop layer in the light-emitting region to the surface of the p-type intracavity contact layer, on which the upper dielectric DBR is then formed.

EFFECT: technical result is that lasers produced by this method have low threshold current, low series resistance and high differential efficiency.

3 cl, 2 dwg