METHOD FOR MANUFACTURING PLANAR DIODE WITH ANODE WHISKER AND AIR LEAD USING “MESA-MESA” TECHNOLOGY Russian patent published in 2023 - IPC H01L29/47 

FIELD: diode manufacturing.

SUBSTANCE: according to the "Mesa-Mesa" method, it is proposed to manufacture a planar diode with an anode terminal in form of an air bridge with a whisker, including deposition of a dielectric film on the surface of the heteroepitaxial structure, in which windows of the ohmic contact of the cathode are created by chemical or physical etching on the resist mask by chemical or physical etching at least up to a highly doped U-shaped cathode layer along with a rectangular window for forming an anode contact pad in the same plane coaxially with it, simultaneous formation of low-resistance ohmic contacts in both windows by explosive lithography or electrochemical metallization methods, followed by annealing and their galvanic thickening, formation using thin (<1 mcm) micron or submicron rectifying barrier anode contact masks.

EFFECT: advantage of the proposed method for manufacturing a diode with an anode terminal in form of an air bridge with a whisker to the anode contact according to the “Mesa-Mesa” method is that the anode and cathode contact pads are located in the same plane as the anode contact.

1 cl, 2 dwg