METHOD FOR OBTAINING ZINC HALCOGENIDES ALLOWED BY TRANSITION METALS Russian patent published in 2017 - IPC C30B31/02 C30B33/02 C30B33/06 C30B29/48 H01S3/16 

FIELD: physics.

SUBSTANCE: at least, one layer of the film containing, at least, one doping transition metal (chromium, cobalt, iron, manganese) is deposited to, at least, a part of the surface of, at least, one element of zinc chalcogenide. Further, the elements are stacked on each other to form a predetermined alternation of zinc chalcogenides and doping transition metals over the cross-section of the element such that, at least, two elements of zinc chalcogenide contact each other through, at least, one layer of the deposited film. The stacked elements are diffusively welded with subsequent diffusion annealing. The obtained samples have improved optical characteristics.

EFFECT: reducing the time of obtaining samples and the number of technological stages, using the obtained zinc chalcogenides as an active medium reduces the laser generation threshold and increases the quantum efficiency of laser generation.

6 cl, 6 dwg, 3 ex