METHOD FOR PRODUCING SOLID SOLUTION FILMS ZNCU IN VI Russian patent published in 2004 - IPC

FIELD: microelectronics and semiconductor optoelectronics.

SUBSTANCE: films Zn_2-2xCu_xIn_xVI₂ are produced in double-stage process. First stage includes vacuum evaporation of following source compound ingredients onto substrate or onto conducting-contact substrate using various methods (sequential or joint): chalcogenide zinc, films of metals (Cu, In or their chalcogenides) with desired atomic ratio of synthesized compound exceeding stoichiometric one by 5 - 10 atom percent of indium content. Second stage includes sintering of structure obtained at temperature varying between 150 and 550°C in chalcogenide vapors at gage pressure for time required for synthesis and recrystallization of layer. Zn_2-2xCu_xIn_xVI₂ films produced in this way are noted for enlarged range of their physical properties and enhanced reproducibility of their composition.

EFFECT: facilitated manufacture, enhanced environmental friendliness of process.

1 cl, 4 dwg, 1 ex