FIELD: physics.
SUBSTANCE: sensor comprises a support frame and an inertial mass fixed to one of its arms by means of elastic console elements with piezoresistive deformation transformers made of semiconductor material integrally, wherein the sensor additionally comprises a pair of elastic torsion elements disposed on opposite arms of the support frame perpendicular to the elastic console elements and connected with the inertial mass, wherein the piezoresistive deformation transformers are made on the basis of silicon nanowires equipped with measuring electrodes.
EFFECT: increasing the sensitivity of the integral acceleration sensor while maintaining the operating frequency range.
2 cl, 3 dwg
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