FIELD: electricity.
SUBSTANCE: radiation source contains semiconductor matrix with one or multiple inclusions (macro or micro), made of material (or materials), electroluminescence of which (or each of which) is excited with the energy of current carriers less than the width of forbidden matrix material energy zone, the extent of inclusion is less than the distance of formation in the material of inclusion of irreversible electrical breakdown with fields creating in it, and also tools to create in matrix or matrices and in inclusions continuous, alternating, pulsed or having other form electrical field with tension (tension amplitude) E, where Ei<E<Em, Em is tension of avalanche breakdown of matrix material, and E is the tension required for set of current carrier of sufficient energy to excite luminescence in the inclusion (or inclusions) material.
EFFECT: ensuring the expansion of the capabilities of electroluminescent radiation sources.
18 cl, 1 dwg
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Authors
Dates
2018-02-15—Published
2013-10-11—Filed