METHOD FOR CREATING AN INTEGRATED CRYOGENIC POWER ADAPTER ON ONE CHIP WITHIN ONE TECHNOLOGICAL PROCESS Russian patent published in 2018 - IPC H01L39/00 C23C14/06 B82B1/00 

FIELD: microelectronics.

SUBSTANCE: invention relates to superconductor microelectronics, in particular to a method for creating an integrated cryogenic power adapter on a single chip. Method comprises applying to the substrate of superconductor layer and forming by electron lithography superconducting detector elements, including meander, connecting wires, contact pads and subsequent transformation of sections of superconducting wires into resistances of the required value by the action of accelerated beam. On the same substrate a bias adapter is also manufactured, for which a resist resistant to ion irradiation is applied on the formed structure of the superconducting elements. Window is opened over the future resistance of the adapter, the superconductor layer is transformed in into a metal by impact of accelerated beam and the window is closed. Window is opened over the future adapter capacitor, the superconductor layer located in the window is transformed into a dielectric by impact of accelerated beam and protective coating is applied.

EFFECT: technical result consists in providing the possibility to create a superconductor single-photon detector and bias adapter as one device within a single technological cycle.

7 cl, 5 dwg, 5 ex