FIELD: microelectronics.
SUBSTANCE: invention relates to microelectronics technology and can be used in making thin-film superconducting structures. Method of manufacturing a detector with thin-film tunnel junctions and a normal metal absorber physically detached from the substrate consists in using separate lithography of the superconductor-insulator-normal metal-insulator-superconductor structure (SINIS), includes the use of a niobium nitride film as a superconductor, the formation of a first layer of superconducting electrodes from materials susceptible to chemical etching, planarisation with aluminium, formation of a second photoresist layer for formation of a tunnel barrier and a layer of normal metal, formation of open windows in the resistive mask for removal of aluminium from under the bridge from normal metal, wherein there is no additional selective etching of normal metal and there are no restrictions on selection of material of normal metal.
EFFECT: design of a superconducting detector with thin-film tunnel junctions of a fixed area with an arbitrary shape and dimensions and a suspended absorber.
1 cl, 11 dwg
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