FIELD: electrical engineering.
SUBSTANCE: invention can be used to create functional switched electronic devices. Essence of the invention is that the method of forming superconducting functional elements of electronic devices having regions with different values of critical current density involves using corpuscular radiation, wherein elements of required geometric shapes and sizes are created, only selected portions of functional elements are irradiated, and low-energy flux of ions or atoms is used as corpuscular radiation, which energy and dose are sufficient for formation of crystal structure defects and / or superconductor material stoichiometry change.
EFFECT: generation of nanosize functional elements of electronic devices with stable parameters of critical current in required areas.
3 cl, 1 dwg, 1 tbl
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| METHOD FOR REDUCING THE HYSTERESIS VALUE BY THE CURRENT OF THE TRANSITION OF SUPERCONDUCTING NANOWIRES FROM THE SUPERCONDUCTING STATE TO THE NORMAL AND VICE VERSA | 2022 |
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RU2794493C1 |
| METHOD OF MAKING SUPERCONDUCTING SINGLE-PHOTON DETECTORS | 2011 |
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