FIELD: instrument engineering.
SUBSTANCE: invention relates to the field of manufacturing power semiconductor devices and can be used to separate semiconductor wafers into round crystals. Method involves forming a chamfer by means of diamond blade tool and cutting crystals from the plate, which are performed by a single tool. In this case, the chamfer is formed by the main cutting edge of the tool disposed at an angle to the plate surface, turning the tool relative to the fixed top, setting the main cutting edge perpendicular to the plate surface and cutting the crystal with an auxiliary cutting edge. Main cutting edge is 2.00 mm long, the auxiliary cutting edge is 0.05–0.15 mm long and located at an angle of 90° to the main one, and the additional cutting edge is no more than 2.00 mm long and located at an angle of 120–170° to the auxiliary cutting edge.
EFFECT: invention is aimed at improving the quality and accuracy of crystals made with the help of one tool on a single machine.
2 cl, 3 dwg
Title | Year | Author | Number |
---|---|---|---|
SEMICONDUCTOR MATERIAL INGOT CALIBRATION METHOD | 2018 |
|
RU2682564C1 |
METHOD OF NANOPOLISHED SILICON CARBIDE WAFER FABRICATION | 2006 |
|
RU2345442C2 |
METHOD TO SEPARATE SOLID-STATE PLATES WITH TWO-SIDED THIN-FILM COAT INTO CRYSTALS | 2008 |
|
RU2385218C1 |
PRE-EPITAXIAL PROCESS OF POLISHED SILICON CARBIDE SUBSTRATES | 2006 |
|
RU2345443C2 |
TREPANNING DRILL | 0 |
|
SU847404A1 |
DRILLING TOOL | 2019 |
|
RU2752605C1 |
METHOD OF SEMI-CONDUCTOR AND OPTICAL MATERIALS PLATES MANUFACTURE | 2005 |
|
RU2337429C2 |
METHOD FOR CUTTING SEMICONDUCTOR MONOCRYSTALS INTO CHIPS | 1998 |
|
RU2137251C1 |
PROCEDURE FOR DE-BURRING AND CHAMFERING ENDS OF TEETH OF LARGE DIMENSION CYLINDER GEARS AT UNIVERSAL TURNING-AND-BORING LATHES | 2009 |
|
RU2410209C1 |
DRILLING TOOL (VARIANTS) WITH CHANGEABLE CUTTING TIPS AND CHANGEABLE CUTTING TIPS (VARIANTS) FOR SUCH DRILLING TOOL | 2003 |
|
RU2319582C2 |
Authors
Dates
2018-03-02—Published
2016-07-04—Filed