SEMICONDUCTOR MATERIAL INGOT CALIBRATION METHOD Russian patent published in 2019 - IPC H01L21/66 

Abstract RU 2682564 C1

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electronic products manufacturing, which workpiece is the semiconductor material ingot, which requires calibration, i.e., the cylindrical surface production. In the semiconductor material ingot calibration method, including roughing and finishing, finishing is performed by grinding with diamond wheels with a grain size of 160–250 mcm, and finishing is performed by turning with the cutting depth of 250–350 mcm with the feed of 500–700 mcm/rpm by the diamond blade tool, which main cutting edge has a rounding radius of 0.2–0.5 mcm and is set parallel to the axis.

EFFECT: technical result consists in increase in the ingot surface layer quality, reduction in the damaged surface layer after processing, increase in the process productivity, eliminating the long-lasting finishing grinding, replacing the blade processing.

1 cl, 2 dwg

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RU 2 682 564 C1

Authors

Zhukov Yurij Nikolaevich

Tikhonov Igor Nikolaevich

Agaeva Elvira Eldarovna

Dates

2019-03-19Published

2018-04-09Filed