COMBINED ELEMENT OF MAGNETORESISTIVE MEMORY (OPTIONS), WAYS OF READING INFORMATION FROM THE ELEMENT (OPTIONS), WAYS OF RECORDING INFORMATION ON THE ELEMENT (OPTIONS) Russian patent published in 2018 - IPC G11C11/16 

FIELD: computer engineering.

SUBSTANCE: invention relates to computer engineering. MRAM element consists of n cells of MRAM, where n ≥ 3, each of the cells comprising at least one layer of magnetic material with a variable orientation of the magnetization vector (free layer) and at least one layer with a fixed direction of the magnetization vector (support layer), the light axis of the first cell of this MRAM element has a predetermined direction, and the direction of the easy axis of each subsequent cell is rotated relative to the previous cell by an angle equal to 2p/n±10 %, the angle between the cell with the number n and the first cell is also 2p/n±10 %.

EFFECT: technical result is to increase the safety of information in the elements on the bit cells of magnetoresistive memory (MRAM).

9 cl, 6 dwg