FIELD: improved multi-bit magnetic memorizing device with arbitrary selection and methods for functioning and manufacture of such a device.
SUBSTANCE: magnetic memory includes one or more paired cells, each one of which has multilayer magnetic structure. Structure contains magnetic-changeable ferromagnetic layer, ferromagnetic basic layer, having non-changeable magnetization state, and corresponding separating layer which divides ferromagnetic layers. Memory cells are ordered in such a way, that effective remaining magnetization of each cell is not parallel to cell axis which is parallel to its long side. Methods describe functioning process of such a device.
EFFECT: increased data recording density, reduced energy consumption and simplified manufacturing process of memorizing device.
3 cl, 30 dwg
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