FIELD: physics, computer engineering.
SUBSTANCE: invention relates to spin-torque transfer MRAM (Magnetic Random Access Memory) array cell circuits. The array-type device includes a plurality of devices on spin-torque transfer magnetic tunnel junctions (MTJ), arranged into an array of memory cells; an information writing/reading device for a specific MTJ device, connected corresponding MTJ devices to change magnetisation polarity of the free layer of each MTJ device, an amplifier unit for reading data at the output of the array of memory cells, capable of detecting the signal level and generate a binary output signal based on comparison of the signal level in the bit of the array of memory cells in a comparator. When forming the topology, the MTJ device is made in form of an ellipse with the easy magnetic axis directed on its large axis.
EFFECT: high density of arranging separate transistor structures of the MOS technology and memory cells of an array, as well as high resistance to non-steady transient processes from the effect of ionising radiations.
12 cl, 37 dwg, 11 tbl
