FIELD: instrument engineering.
SUBSTANCE: group of inventions refers to memory devices and can be used to establish a memory cell offset. Device comprises a memory controller including a word line (WL) control module and a bit line (BL) control module, wherein the memory controller is configured to initiate a selection of a target memory location; polling module, configured to determine whether the target memory cell has been selected; and a C-cell offset module, which is configured to establish a C-cell offset, if the target cell is not selected.
EFFECT: technical result is a decrease in power, energy consumption, crystal size, delay time.
19 cl, 3 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| REFERENCE ARCHITECTURE IN CROSS-POINT MEMORY | 2015 |
|
RU2669103C2 |
| MITIGATING READ DISTURB IN A CROSS-POINT MEMORY | 2015 |
|
RU2653320C2 |
| NON-DESTRUCTIVE READING METHOD | 2002 |
|
RU2263359C2 |
| RECORDING OPERATION FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH SPIN TRANSFER TORQUE WITH REDUCED SIZE OF BIT CELL | 2009 |
|
RU2471260C2 |
| PHOTO-ELECTRIC OR ELECTRET MEMORIZING DEVICE AND METHOD FOR CONTROLLING SUCH A DEVICE | 2003 |
|
RU2297051C2 |
| ENERGY-INDEPENDENT PASSIVE MATRIX, METHOD FOR READING FROM SUCH MATRIX AND DEVICE FOR THREE-DIMENSIONAL DATA STORAGE | 2001 |
|
RU2245584C2 |
| DEVICE WITH PASSIVE MATRIX ADDRESSING AND METHOD FOR READING INFORMATION FROM THIS DEVICE | 2002 |
|
RU2275698C2 |
| SEMICONDUCTOR MEMORY DEVICE | 2014 |
|
RU2642960C2 |
| MEMORY DEVICE AND METHOD OF ITS CONTROL | 2016 |
|
RU2669872C1 |
| SYSTEM AND METHOD FOR SELECTIVELY APPLYING NEGATIVE VOLTAGE TO WORDLINES DURING MEMORY DEVICE READ OPERATION | 2009 |
|
RU2450372C2 |
