REFERENCE ARCHITECTURE IN CROSS-POINT MEMORY Russian patent published in 2018 - IPC G11C7/12 G11C8/08 

FIELD: computer equipment.

SUBSTANCE: invention relates to the computer equipment. In the method, the memory access device includes a memory controller configured to select a target memory cell for a memory access operation, wherein the controller comprises: a word line (WL) switch circuity configured to select a global WL (GWL) and local WL (LWL) associated with the target memory cell; a bit line (BL) switch circuity configured to select a global BL (GBL) and local BL (LBL) associated with the target memory cell; and a sense circuity comprising a first sense capacitance and a second sense capacitance, the sense circuity being configured to precharge the selected GWL, LWL, and the first sense circuity capacitance to the WL bias voltage WLVDM, producing a reference voltage (VREF), using the charge for the selected GWL and charge of the first sense circuity capacitance, determining the state of the target memory cell at least in part based on the VREF and the detected memory voltage VLWL.

EFFECT: providing the possibility of locally obtaining a reference voltage for reading memory cells.

23 cl, 7 dwg