POWER TRANSISTOR UNIT Russian patent published in 2018 - IPC H03K17/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electrical engineering and can be used to create power electronic units and converters for control systems of electrical machines. Power transistor unit contains an IGBT or MOSFET located in a sealed housing, a current sensor, a capacitive filter and a control board. In it, depending on the embodiment, the current sensor is made on the basis of a magnetically sensitive element and is placed near the power bus, or between the power buses inside the housing, or outside this housing between its surface control board. Capacitive filter can be made on the basis of ceramic capacitors with an upper temperature range of at least +125 °C, connected together in parallel and/or sequentially and located on the control board, inside the case, on the power bus or between the power buses connected to the power terminals. There are various options for cooling the capacitors of the capacitive filter and the control board. Invention makes it possible to solve the problem of reducing the overall dimensions, volume and mass of a power transistor unit.

EFFECT: technical result consists in reduced overall dimensions, volume and mass of the power transistor unit.

14 cl, 4 dwg