FIELD: optics.
SUBSTANCE: method for forming quantum dots based on the effect of higher-order Mie super-resonant modes includes the stages of adding and diluting group III–V semiconductors, e.g., GaAs with nitrogen N, reducing the band gap, followed by adding hydrogen H, forming stable N-H complexes, controlling the diffusion of hydrogen inside the nitride due to the breakage of N–H bonds, due to the location of a spherical homogeneous dielectric particle on the surface of the semiconductor, wherein said particle generates a photon jet in the semiconductor material when irradiated with electromagnetic radiation with a flat or Gaussian wavefront. The spherical homogeneous mesoscale particle is made of a material with a relative refractive index in the range of 1.5 ≤n<2, relative to the refractive index of the environment, and an approximate relative diameter D/λ<60 of excitation of higher-order Mie super-resonant modes therein when irradiated with electromagnetic radiation with a change in the frequency of the incident wave. Additionally, a monolayer of two or more spherical homogeneous mesoscale particles wherein higher-order Mie super-resonant modes are excited while irradiated with electromagnetic radiation is put on the surface of the semiconductor.
EFFECT: development of a method for forming quantum dots based on the effect of higher-order Mie super-resonant modes.
2 cl, 3 dwg
