FIELD: electrical engineering.
SUBSTANCE: invention relates to semiconductor electronics, semiconductor devices having a sensitivity to the effect of a magnetic field. Technical result consists in increasing the sensitivity in a microminiature design. Film concentrator of the magnetic field is formed on a substrate with a magnetically sensitive element coated with a dielectric layer, in the form of partially intersecting two rings of variable width with a gap, near an element sensitive to the magnetic field.
EFFECT: flat structure of the concentrators allows to minimize the distance from the conductor with the current and to use a strong magnetic field near the conductor with current, and the induction of the magnetic field near the conductor with current is amplified in the region of the arrangement of magnetically sensitive elements due to a change in the width of the rings and the addition of magnetic fluxes from the two rings.
1 cl, 4 dwg
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Authors
Dates
2018-06-04—Published
2016-07-14—Filed