INTEGRATED CURRENT-MAGNETIC SENSOR INCORPORATING LIGHT-EMITTING DIODE DISPLAY Russian patent published in 2007 - IPC H01L27/22 

FIELD: semiconductor electronics; magnetic field sensing semiconductor devices (bipolar structures).

SUBSTANCE: proposed current-magnetic sensor incorporating light-emitting diode display has semiconductor device responsive to magnetic field, as well as magnetic-field responsive loading and amplifying MOS transistors of bipolar double-collector type. Magnetic-field responsive base region of semiconductor device is isolated from substrate by diffusion pocket accommodating beyond-base-region contacts; highly doped contact regions are formed in substrate; substrate contacts and emitter are electrically interconnected and placed at equal potential. Loading and amplifying MOS transistors are disposed in separate pocket and function to transmit signals from magnetic-field sensing double-collector lateral bipolar transistor to light-emitting diode display.

EFFECT: reduced impact of device substrate currents onto integrated-circuit adjacent parts, reduced measurement error brought in by initial unbalance of transistor collector currents.

1 cl, 7 dwg