METHOD FOR PRODUCING BISMUTH SILICATE BI12SIO20 BY CRYSTALIZATION METHOD IN CRUBICLE Russian patent published in 2018 - IPC C30B29/34 C01G29/00 C01B33/20 

FIELD: chemistry.

SUBSTANCE: invention relates to chemistry and can be used in the field of piestic- and optoelectronics. Method for producing bismuth silicate Bi₁₂SiO₂₀ by crystallization method in crubicle includes preliminary mechanical mixing of the initial bismuth oxide powders Bi₂O₃ and silicon oxide SiO₂, heating of resulting mixture in platinum crucible up to 985±10 °C – 1,250±10 °C to obtain melt with a holding time of not less than 15 minutes, cooling of melt in a crucible up to 900±10 °C – 953±10 °C with isothermal holding in this temperature range for at least 15 minutes and further in air at cooling rate of 3–200 °C/min. A single-phase Bi₁₂SiO₂₀ in form of grains having dendritic form are obtained.

EFFECT: this material has high response rate and high sensitivity.

1 cl, 4 dwg