LIGHT-EMITTING DIODE Russian patent published in 2018 - IPC H01L33/50 

Abstract RU 2666578 C1

FIELD: lighting engineering.

SUBSTANCE: invention relates to structures of light-emitting diodes. Light emitting diode consists of n-layers, where n is greater than one, and includes at least one light-emitting layer and one phosphor layer made in form of thin ceramic phosphor plate, ceramic phosphor plate is made with low content of minor non-luminescent phases of less than 3 % by mass, profile of lower surface of ceramic phosphor plate facing light-emitting layer, is formed in form of concave microlenses with characteristic diameter of 0.1 to 0.8 mcm.

EFFECT: invention provides increase in efficiency of light-emitting diode due to decrease in radiation energy loss, which occur as result of absorption of radiation by non-luminescent materials both in phosphor layer and in other layers (structures) of light-emitting diode.

1 cl, 2 dwg

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RU 2 666 578 C1

Authors

Feopentov Anatolij Valerevich

Dates

2018-09-11Published

2017-08-08Filed