FIELD: materials science.
SUBSTANCE: invention relates to means of radiation material science and is intended to improve the electrophysical, chemical and mechanical properties of near-surface layers of products made of metals and alloys, semiconductors, dielectrics and other materials. Method of implanting the ions of the substance is carried out by generating a plasma stream, pre-injecting the plasma into the drift space and focusing the beam, then plasma-immersion formation of the ion beam with its further transportation and ballistic focusing in the drift space and irradiating the sample with pulse-periodic plasma flows and ion beams. Before irradiating the sample with ions, they are braked while simultaneously compensating for the space charge of the ion flow.
EFFECT: increased depth of the near-surface ion-doped layer of the sample.
1 cl, 3 dwg
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