FIELD: technological processes.
SUBSTANCE: invention relates to a method for low-energy defect-free etching of nitride layers of AlGaN/GaN heterostructures and can be used in making semiconductor devices with high degree of integration. Using this method of etching the barrier layer, the thickness of the barrier layer can be reduced to the value required for realizing a given working shift on the gate of the field-effect transistor without introducing defects into the gate region. For oxidation of AlGaN barrier layer and selective removal of its oxides there used is same reactor of plasma-chemical plant with source of inductively coupled plasma.
EFFECT: disclosed is a method for dry etching of nitride layers.
1 cl, 4 dwg
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