METHOD TO PRODUCE MICROWAVES OF FIELD HIGH POWER PSEUDOMORPHIC TRANSISTOR Russian patent published in 2017 - IPC H01L21/335 

FIELD: electricity.

SUBSTANCE: method to produce microwaves of field power pseudomorphic transistor on a heteroepitaxial structure AlGaAs/InGaAs/GaAs consists in the fact that a sub-micron t-gate is formed using optical lithography. When forming a sub-micron t-gate base, a two-layer mask of dielectric and photoresist is used. The overlying layer of photoresist mask is remelted and the port is narrowed in the underlying dielectric layer, determining the size of the base of the sub-micron t-gate. Then it is reduced to dimensions comparable to resolution of electron-beam lithography.

EFFECT: increasing the transistor power to high power level while increasing its performance.

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