FIELD: optics.
SUBSTANCE: invention relates to the field of optoelectronic instrument making and concerns a light-emitting device. Light-emitting device has a light-emitting structure, a processing layer and an optical structure. Optical structure comprises material treated by treating light. Processing layer is designed to reduce the reflection of processing light in the direction of the optical structure during treatment of the material by means of processing light. Treatment layer comprises a non-reflective coating which is configured to pass treatment light to the absorbent structure such that reflection of the treatment light is reduced by absorption through an absorbent structure.
EFFECT: technical result consists in improvement of quality of obtained optical structures of light-emitting device.
12 cl, 15 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| LIGHT-EMITTING SEMICONDUCTOR DEVICES WITH A GETTER LAYER | 2015 |
|
RU2672776C2 |
| LASER DEVICE WITH INTRINSIC SAFETY, CONTAINING A VERTICAL-CAVITY SURFACE-EMITTING LASER | 2018 |
|
RU2723143C1 |
| LIGHT EMITTING DEVICE BONDED TO A SUPPORT SUBSTRATE | 2012 |
|
RU2604956C2 |
| LIGHT-EMITTING DEVICE AND METHOD TO MANUFACTURE LIGHT-EMITTING DEVICE | 2011 |
|
RU2525325C2 |
| METHOD FOR PRODUCING NONREFLECTING NEUTRAL OPTICAL FILTER | 2000 |
|
RU2186414C1 |
| SAFE LASER DEVICE FOR OPTICAL PROBING APPLICATIONS | 2016 |
|
RU2712939C2 |
| LASER OF EMITTING SURFACE WITH VERTICAL CAVITY | 2016 |
|
RU2655716C1 |
| VCSEL WITH INTRACAVITY CONTACTS | 2013 |
|
RU2633643C2 |
| HEATING SYSTEM COMPRISING SEMICONDUCTOR LIGHT SOURCES | 2015 |
|
RU2669549C2 |
| OPTOELECTRONIC DEVICE FOR HIGH-SPEED DATA TRANSFER BASED ON SHIFT OF DISTRIBUTED BRAGG REFLECTOR STOP ZONE EDGE DUE TO ELECTROOPTIC EFFECT | 2007 |
|
RU2452067C2 |
