FIELD: optics; electrical engineering.
SUBSTANCE: invention relates to laser semiconductor electronic engineering. Laser (100) of emitting surface with vertical cavity (VCSEL) comprises a first electrical contact (105), a substrate (110), a first distributed Bragg reflector (115), an active layer (120), a second distributed Bragg reflector (130), and a second electrical contact (135). Also contains at least one layer AlyGa(1-y)As with 0.95≤y≤1 at least 40 nm in thickness. AlyGa(1-y)As layer is divided by at least one oxidation control layer (119, 125b).
EFFECT: technical result is to provide the possibility of increasing the laser reliability.
13 cl, 16 dwg
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