OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURE THEREOF Russian patent published in 2018 - IPC H01L31/04 H01L31/18 H01L51/52 

FIELD: optics; electrical engineering.

SUBSTANCE: optoelectronic device (10) comprises first substrate (12) having first surface (14) and second surface (16), optoelectronic coating (17) located above second surface (16) and containing underlying layer (18), located above second surface (16), first conductive layer (20) located above underlying layer (18), top layer (22) located above first conductive layer (20), semiconductor layer (24) located above first conductive layer (20), and second conductive layer (26) located above semiconductor layer (24). First conductive layer (20) contains tin oxide and a dopant additive, which is tungsten, and/or top layer (22) includes buffer layer (42), which contains tin oxide and at least one material selected from the group consisting of: zinc, indium, gallium and magnesium.

EFFECT: invention provides an optoelectronic device with a conductive layer of high conductivity with high light transmission and light scattering.

12 cl, 5 dwg