PHOTOCATALYTICALLY ACTIVE FILM PRODUCTION METHOD Russian patent published in 2018 - IPC B01J23/72 B01J35/02 B01J37/03 B05D7/24 

FIELD: technological processes.

SUBSTANCE: invention relates to the field of photocatalytically active semiconductor films production. Photocatalytically active film production method, including of the Cu⁺² ions in the form of copper oxide or copper hydroxide deposition from the copper inorganic salt solution on the substrate. Deposition is performed from the copper (II) chloride ammoniate solution with a concentration of 0.3–3.0 mol/l at a temperature of 45–75 °C with the free ammonia concentration of 4.0–11.2 mol/l. At that, using the silica gel, glass, nickel foil as the substrate.

EFFECT: method allows to produce the photocatalytically active film in one stage both on the glass, metal foil flat samples, and on powdered materials, for example, on silica gel powder.

1 cl, 3 dwg, 4 ex