FIELD: technological processes.
SUBSTANCE: invention relates to the manufacture of a sputtered composite target containing the phase of a Co2MnSi Heusler alloy, which can be used in the production of microelectronics. Method includes mechanical mixing of powders of the alloy components with obtaining a homogeneous powder mixture and its sintering-pressing. Sintering-pressing the powder mixture at a temperature of 600 °C and a pressure of 2.5 kN by passing a sequence of DC pulses up to 5 kA with a pulse duration of 3.3 ms through the filling of the powder mixture to obtain a compact. Resulting compact is melted in an induction furnace quartz crucible at 1,300 °C for 3 hours to obtain a homogenized ingot. Ingot is crushed and crushed to obtain particles with a size of 1–200 mcm and sintering-pressing of the composite target from the obtained particles is carried out by the method of electropulse plasma sintering with control of the dilatometric shrinkage curve.
EFFECT: it provides a homogenized composition of a mechanically strong composite target, which has a porosity in the range of 2–40 % and contains only the phase of the Heusler alloy of stoichiometric composition.
7 cl, 4 dwg, 2 ex
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Authors
Dates
2019-01-28—Published
2017-11-07—Filed