METHOD FOR PRODUCING A THIN-FILM THERMOELECTRIC CONVERTER BASED ON HIGHER MANGANESE SILICIDE Russian patent published in 2022 - IPC H01L35/34 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the epitaxial technology for producing thermoelectric converters with a thermoelectric element in the form of a thin film of higher manganese silicide. Substance: method for producing a thermoelectric converter includes manufacturing a thermoelectric element in the form of a thin film of higher manganese silicide by sublimation formation thereof in vacuum on the surface of a substrate. A molecular source of the components of sublimation formation is pre-manufactured by means of electric pulse plasma sintering (EPPS) of a powdered mixture of silicon and manganese with an average particle size thereof of 0.5 mcm and a ratio of content thereof in said mixture corresponding to the composition of higher manganese silicide Si_1.75-δMn (δ=0.00 to 0.02) in the EPPS mode at a pressure of 50 to 70 MPa with a heating rate of the powdered mixture of 50 to 100°C/min to a temperature of 850 to 1,050°C and holding at this temperature for 10 to 30 minutes . A film of higher manganese silicide with a thickness of 60 to 100 nm is then formed by sublimation formation by means of pulsed laser deposition (PLD) in high vacuum on the surface of a substrate made of sapphire or mica with a temperature of 350°C using a manufactured molecular source as a target. Deposition is executed by laser pulses with a duration of 10 ns with a repetition frequency of 10 Hz and a deposition time of 60 to 100 min, using a sputtering laser beam with the pulse energy thereof at 110 MJ.

EFFECT: increase in the stability of operating properties of the thermoelectric element defined by the increased thermoelectric Q-factor thereof in the extended temperature range, eliminated stray conductance of the substrate at a temperature above 300°C, reduction of the heat conductivity and increase in the radiation resistance thereof.

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