METHOD OF PRODUCTION OF A THIN-FILM THERMOELECTRIC CONVERTER BASED ON CHROMIUM DISILICIDE Russian patent published in 2023 - IPC H10N10/01 B82Y40/00 

FIELD: thermoelectric converters.

SUBSTANCE: invention is related to the technology of manufacturing thermoelectric converters. The invention concerns the method for production of thin-film thermoelectric converters based on chromium disilicide, which includes the manufacturing of a thermoelectric element in form of a thin film of chromium disilicide by its sublimation formation in vacuum on the substrate surface. The method includes manufacturing a molecular source of components of sublimation formation by electropulse plasma sintering of a powder mixture of silicon and chromium with an average particle size of 0.5 mcm at a ratio of their content in the specified mixture corresponding to the composition of chromium disilicide CrSi₂ by electropulse plasma sintering in a vacuum of 5 Pa under pressure of 50 MPa with a heating rate of the specified powder mixture 25-50°C/min up to a temperature of 1110°C. After that, sublimation formation of a film of the desired chromium disilicide with a thickness of 100 nm is carried out with a power factor W = 40-110 mcW/m⋅K² in the temperature range 50-650°C using the method of pulsed laser deposition in high vacuum on the surface of a substrate made of sapphire at a temperature of 200-450°C, using a manufactured molecular source as a target in the mode of pulsed laser deposition using a sputtering laser beam with its pulse energy of 110 mJ.

EFFECT: invention provides optimization of production of a thermoelectric converter based on CrSi₂, increasing the stability of a thermoelectric element in an extended temperature range by improving the structure of the chromium disilicide film and eliminating the parasitic conductivity of the substrate at temperatures above 300°C, reducing its thermal conductivity and increasing its radiation resistance.

3 cl, 2 dwg, 2 ex