FIELD: technological processes.
SUBSTANCE: invention relates to the piezoelectric ceramic materials, and can be used in the computer engineering for the memory devices memory arrays development. Piezoelectric ceramic material including PbTiO3, PbZrO3, PbW1/2Cd1/2O3, additionally contains PbW3/5Li2/5O3 and Yb2O3 in the following components ratio, wt.%: PbTiO3 36.19–36.58; PbZrO3 55.39–55.99; PbW1/2Cd1/2O3 2.43–2.80; PbW3/5Li2/5O3 4.66–5.00; Yb2O3 0.36–0.60.
EFFECT: technical result of the invention is the coercive force reduction while maintaining the piezoelectric parameters sufficiently high values, including the Curie points of not lower than 300 °C.
1 cl, 3 tbl, 5 ex
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Authors
Dates
2019-02-18—Published
2018-04-19—Filed