FIELD: electronics.
SUBSTANCE: invention relates to electronics and can be used as a low-noise device for amplifying analogue signals in the structure of analogue microcircuits for various functional purposes, for example, operational amplifiers, comparators, etc., including those operating at low temperatures and exposure to radiation. Differential amplifier based on complementary field-effect transistors with control p-n junction comprises first (1) and second (2) inputs of device, first (3) and second (4) antiphase current outputs matched with first (5) power supply bus, third (6) and fourth (7) antiphase current outputs matched with second (8) power supply bus, first (9) input field-effect transistor, gate of which is connected to first (1) input of device, and drain is connected to first (3) current output, second (10) input field-effect transistor, gate of which is connected to second (2) input of device, and drain is connected to second (4) current output, third (11) input field transistor, drain of which is connected to third (6) current output, fourth (12) input field-effect transistor, which drain is connected to fourth (7) current output, wherein first (13) and second (14) resistors are connected in series between first (9) input field transistor source and second (10) input field transistor source. Gate of third (11) input field-effect transistor is connected to the source of first (9) input field-effect transistor, the gate of fourth (12) input field-effect transistor is connected to the source of second (10) input field-effect transistor, and common unit of in-series connected first (13) and second (14) resistors is connected to combined sources of third (11) and fourth (12) input field-effect transistors.
EFFECT: creation of conditions at which lower values of input capacitances are provided at inputs of amplifier, as well as higher stability of static mode (SSM) due to reduction of number of passive elements, spread of parameters of which influences SSM.
7 cl, 12 dwg
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