FIELD: semiconductor field-effect photocathodes for manufacturing radiation detectors.
SUBSTANCE: proposed method for manufacturing field-effect photocathode includes vacuum degassing and cleaning of effective photoemissive surface of cathode by electrochemical desorption in hydrogen H atmosphere at pressure of 5 - 10 torr until nuclear-pure surface is obtained. After that mentioned surface is covered with regenerated shielding coating in the form of layer of gold Au, 2 to 5 monolayers thick, by way of thermal evaporation of coating material in vacuum. Then vacuum is relieved and field-effect photocathode is stored in the open.
EFFECT: enhanced corrosion resistance of radiation detector field-effect photocathode.
1 cl, 2 dwg
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Authors
Dates
2005-03-10—Published
2003-11-06—Filed