EMITTER WITH NEGATIVE ELECTRONIC AFFINITY Russian patent published in 2018 - IPC H01J9/12 

FIELD: physics.

SUBSTANCE: emitter with a negative electron affinity for the photoelectronic infrared range converter that contains a transparent window, a translucent semiconductor film from compound A³B⁵, doped of p-type, deposited on the window surface, a layer of atoms of cesium and oxygen deposited on the surface of the semiconductor film further comprises a wide band-gap semiconductor film, doped of n-type, deposited on the semiconductor film A³B⁵ in the form of a closed strip around the perimeter of the emitter with a width of 1 mcm and a thickness of more than 0.2 microns.

EFFECT: providing the possibility of increasing the lifetime during the manufacture of the device and in the process of operating the device by limiting the escape of cesium from the surface.

2 dwg