FIELD: lighting devices.
SUBSTANCE: light-emitting device according to the invention comprises semiconductor layers of a light-emitting diode (LED) comprising an N-type layer, an active layer, emitting primary light, and P-type layer; and luminescent sapphire connected to semiconductor layers, wherein LED semiconductor layers and luminescent sapphire are part of LED chip, wherein luminescent sapphire contains oxygen vacancies, which lead to formation of F-type centers having given optical absorption and emission luminescence bands; luminescent sapphire, absorbing part of primary light and converting with decreasing primary light for emission of secondary light through centers of F-type so that radiation from LED crystal included at least combination of primary light and secondary light. Method of manufacturing the light-emitting device is also proposed.
EFFECT: invention provides cost reduction, higher conversion efficiency and higher reliability.
15 cl, 11 dwg
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Authors
Dates
2019-05-06—Published
2014-01-02—Filed