CORRECTION OF PROXIMITY EFFECT IN SYSTEM FOR LITHOGRAPHY BY BEAMS OF CHARGED PARTICLES Russian patent published in 2019 - IPC H01J37/317 

FIELD: physics.

SUBSTANCE: invention relates to a proximity effect correction method, for example, which can be performed in a system for lithography with beams of charged particles. Technical result is achieved by fact, that in method, comprising steps of: receiving a digital topological pattern to be applied on a target using one or more charged particle beams. Step of selecting a proximity main function comprising a sum of alpha and beta proximity functions, wherein said proximity alpha function simulates an internal proximity effect, and said proximity beta model simulates an external proximity effect, where constant η is defined as the relation between the proximity beta function and the proximity alpha function in said sum, wherein 0 <η<1. Step of determining the modified proximity function, which corresponds to said main proximity function, where the proximity alpha function has been replaced with the Dirac delta function. And the stage of using the electronic processor performing the convolution of the digital topological pattern with the modified proximity function to obtain the corrected topological pattern.

EFFECT: technical result is performance of improved method of correction of proximity effect of beam of charged particles.

28 cl, 14 dwg